Wafer Level Hysteresis Loop Instrument Non Destructive Wafer Measurement System

Name: Wafer Level Hysteresis Loop Instrument Non Destructive Wafer Measurement System
Brand: Truth Instruments Co., Ltd.
SKU: Wafer-MOKE
Availability: InStock

Wafer-Level Hysteresis Loop Measurement Instrument Product Introduction Using polar/longitudinal magneto-optical Kerr effects (MOKE), this instrument rapidly and globally detects the magnetism of wafer films. Non-contact measurement avoids wafer damage and is suitable for post-patterning sample testing in spin chip production. It provides a vertical magnetic field of up to 2.5 T and an in-plane magnetic field of up to 1.4 T, with strong magnetic fields inducing free and

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Magneto Optical Kerr Effect Microscope

High Resolution Microscope

Kerr Imaging System

Product Details

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Wafer Level Hysteresis Loop Instrument

Non Destructive Wafer Measurement System

Non Destructive Hysteresis Loop Instrument

Name: Hysteresis Loop Instrument

Uptime: 90%

Magnetic Field Uniformity: Better Than ±1%@Φ1 Mm

EFEM: Optional

Sample Size: Compatible With 12-inch And Below, Supports Fragment Testing

Magnetic Field Resolution: PID Closed-loop Feedback Regulation, 0.01 MT

Testing Functions: Non-destructive Hysteresis Loop Measurement Of Magnetic Stacks/devices, Automatic Extraction Of Hysteresis Loop Information (free Layer And Pinned Layer Hc, Hex, M (Kerr Angle Value)), And Rapid Mapping Of Wafer Magnetic Characteristic Distribution

Testing Efficiency: 12 WPH@±1.3 T /9 Sites Measurement/200 Mm Wafer

Sample Repeatability: Better Than 10 μm

Basic Properties

Place of Origin: CHINA

Brand Name: Truth Instruments

Model Number: Wafer-MOKE

Trading Properties

Price: Price Negotiable | Contact us for a detailed quote

Payment Terms: T/T

Product Description

Wafer-Level Hysteresis Loop Measurement Instrument

Product Introduction

Using polar/longitudinal magneto-optical Kerr effects (MOKE), this instrument rapidly and globally detects the magnetism of wafer films. Non-contact measurement avoids wafer damage and is suitable for post-patterning sample testing in spin chip production. It provides a vertical magnetic field of up to 2.5 T and an in-plane magnetic field of up to 1.4 T, with strong magnetic fields inducing free and reference layer flipping in vertically anisotropic magnetic access random memory (MRAM) film stacks. Ultra-high Kerr detection sensitivity allows single-time characterization of subtle magnetic changes in different film layers. Combining laserpoint-by-point probing with scanning imaging enables rapid creation of global wafer magnetic characteristic maps, aiding process optimization and yield control.

Equipment Performance

Equipment Performance Indicator	Description
Sample Size	Compatible with 12-inch and below, supports fragment testing
Magnetic Field	Vertical ±2.4 T; In-plane ±1.3 T
Magnetic Field Resolution	PID closed-loop feedback regulation, 0.01 mT
Magnetic Field Uniformity	Better than ±1%@Φ1 mm
Kerr Angle Resolution	0.3 mdeg (RMS)
Testing Efficiency	12 WPH@±1.3 T /9 sites measurement/200 mm wafer
Sample Repeatability	Better than 10 μm
Uptime	90%
EFEM	Optional
Testing Functions	Non-destructive hysteresis loop measurement of magnetic film stacks/devices, automatic extraction of hysteresis loop information (free layer and pinned layer Hc, Hex, M (Kerr angle value)), and rapid mapping of wafer magnetic characteristic distribution